n type conductivity造句

• 2 for the first time , rf sputtering method and vapor doping method have been combined to prepare n type bn films . bn films doped with s are n type conductivity
  掺s后的氮化硼薄膜表现出n型导电，未掺杂的氮化硼薄膜的电阻率1 . 8 1011 cm ，掺杂后的氮化硼薄膜的电阻率为7 . 3 107 cm 。
• Bn films doped with s are n type conductivity . undoped bn films exhibit a resistivity of 1 . 8 1011 cm and those of doped are 2 . 13 105 cm ， decreased by six order of magnitude . s fountain temperature and substrate temperature impact the resistivity evidently
  S源加热温度对氮化硼薄膜的电阻率有直接影响，表现在随着s源加热温度的升高，氮化硼薄膜的电阻率下降的趋势加快。